Pular para o conteúdo principal
  • Portal do Governo Brasileiro
  • Atualize sua Barra de Governo
Início
Buscar: Pesquisador(a) | Publicação
Portuguese Chinese (Simplified) English French German Korean Russian Spanish Swahili Yoruba

Menu principal

  • PESQUISADORES
  • REVISTAS
  • ASSUNTOS
  • PUBLICAÇÕES
Início Raman excitation profile of the G band in single-chirality carbon nanotubes

Raman excitation profile of the G band in single-chirality carbon nanotubes

Título: 
Raman excitation profile of the G band in single-chirality carbon nanotubes
Autor: 
Pedro Paulo de Mello Venezuela
Ano: 
2014
DOI: 
10.1103/PhysRevB.89.035402
Revista: 
Physical Review. B, Condensed Matter and Materials Physics
ISSN: 
10980121
Home: 
[doi:10.1103/physrevb.89.035402]
Idioma: 
Inglês
Buscar essa publicação no Google Acadêmico

Publicações com a mesma autoria

Vacancy-mediated diffusion in disordered alloys: Ge self-diffusion in Si1-xGex
Commensurability effect on the electronic structure of carbon nanostructures: Impact on supercell calculations in nanotubes
Resonance Raman enhancement by the intralayer and interlayer electron-phonon processes in twisted bilayer graphene
Standing-wave observations in single-wall carbon nanotube quantum dots and Y-junction rings
Alloy decomposition during growth due to mobility differences
Raman Spectroscopy of Twisted Bilayer Graphene
Ab initio calculations of vacancies in SixGe1-x
Electronic and structural properties of germanium self-interstitials
The effects of oxygen on the surface passivation of InP nanowires
Ab Initio Study of Group V Elements in Amorphous Silicon and Germanium
  •  
  • 1 de 6
  • próximo ›

Sobre o site | Fale conosco

Versão Alpha. As informações contidas neste site foram importadas do Lattes no dia 20/04/2022.